817 Dip-4 Dip Optocoupler Phototransistor

817 Dip-4 Dip Optocoupler Phototransistor
Model:PS817
Product Details:


Description

1. An optically coupled isolation device consisting of a GaAs light-emitting diode and an NPN phototube

2. The PIN distance is 2.54mm

3. Model:PS817



Limit parameters(Ta=25℃)


parametersymbolRated valueunit
InputForward currentIF50mA
Reverse voltageVR6V
Dissipated powerP70mW
OutputCollector - emitter collapse voltage VCEO70
V
Emitter - collector collapse voltageVECO6V
Collector currentIC50mA
Collector power dissipationPC150mW
Total dissipation powerPtot200mW
* 1 Insulation voltageViso5000Vrms
Operating temperatureTopr-30 to + 100
storage temperatureTstg-55 to + 125
*2 Welding temperatureTsol260

 *1. Exchange 1 minute, humidity 40 ~ 60%

Use the following method to test high pressure

(1) The input terminal of the positive and negative short, the output of the collector and emitter short.

(2) The AC voltage used shall be a sine wave

         *2. The welding time is within 10 seconds


●Photoelectric characteristics (Ta=25℃)


parameter
symbolTest Conditions
MinTyp
MaxUnit
InputForward voltage
VFIF=20mA--1.21.4V
Reverse currentIRVR=4V----10uA
Terminal CtV=0, f=1KHz--30250pF
OutputCollector dark ICEOVCE=20V, IF=0----100nA
Collector - emitter collapse voltageBVCEO

IC=0.1mA

IF=0
70100--V
Emitter - collector collapse voltageBVECO

IE=10μA

IF=0
69--V
Collector currentIc

IF=5mA

VCE=5V


2.5--30mA
*2 Current conversionCTR50--600%
Saturation voltageVCE(sat)


IF=20mA

IC= 1mA


--0.10.2V
Insulation resistanceRiso

DC500V

40~60%R.H

10

5×10

11

1×10
--Ω
capacitanceCf

V=0, f=1MHz

--
0.6
1pF
Cut to frequencyfc

VCE=5V, IC=2mA

RL=100Ω, -3dB


--80
--kHz
Reaction time(up)tf

VCE=2V, IC=2mA

RL=100Ω
--418μs
Reaction time(down)tf--318μs

*1 CTR= IC / IF × 100%

CTR Sub-file

BIN LEVERMIN(%)MAX(%)
L50
100
A80160
B130260
C200
400
D300600
L or A or B or C or D50600


Note: The above test conditions are: IF = 5mA, VCE = 5V, Ta = 25 .


Features:

1. Current conversion ratio CTR (at I F = 5mA, V CE = 5V under CTR: MIN 50%)

2. Insulation voltage between input and output is high (V ISO = 5,000Vrms)

3. Response time (rise time tr: typical value 4μs at V CE = 2V, I C = 2mA, R L = 100 Ω) 


Packaging & Shipping


Payment term

1. TT:30% deposit by TT,70% balance before shipping(Block products)

2. Pay by paypal, HSBC bank, ABC bank.

Supply Ability

10,000,000pcs per day


Packing details

1. 100-120bags one carton

2. Packing measurement: 43cm*33cm*52cm

3. Neutral packing, export standard carton

4. Custom made for carton label

5. All of the productions are inspected carefully by QC before delivery


Delivery Time

1. Samples:1-3 days

2. Big order:7-15 days


Shipping

DHL, UPS, FEDEX, EMS, TNT, by sea, by air flight 

Welcome to buy the 817 dip-4 dip optocoupler phototransistor with our factory, and enjoy our competitive price. As one of the professional China manufacturers and suppliers, we won't let you down.

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